Reducing SSD read latency via NAND flash program and erase suspension

نویسندگان

  • Guanying Wu
  • Xubin He
چکیده

In NAND flash memory, once a page program or block erase (P/E) command is issued to a NAND flash chip, the subsequent read requests have to wait until the timeconsuming P/E operation to complete. Preliminary results show that the lengthy P/E operations may increase the read latency by 2x on average. As NAND flashbased SSDs enter the enterprise server storage, this increased read latency caused by the contention may significantly degrade the overall system performance. Inspired by the internal mechanism of NAND flash P/E algorithms, we propose in this paper a low-overhead P/E suspension scheme, which suspends the on-going P/E to service pending reads and resumes the suspended P/E afterwards. In our experiments, we simulate a realistic SSD model that adopts multi-chip/channel and evaluate both SLC and MLC NAND flash as storage materials of diverse performance. Our experimental results show that the proposed technique achieves a near-optimal performance gain on servicing read requests. Specifically, the read latency is reduced on average by 50.5% compared to RPS and 75.4% compared to FIFO at cost of less than 4% overhead on write requests.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP

Features • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance – Random READ: 25μs – Sequential READ: 30ns (3V x8 only) • WRITE performance – PROGRAM PAGE: 300μs (TYP) – BLOCK ERASE: 2ms (TYP) • Endurance: 100,...

متن کامل

Short-Random Request Absorbing Structure with Volatile DRAM Buffer and Nonvolatile NAND Flash Memory

This paper is to design a short-random request absorbing structure which can be constructed with volatile DRAM buffer and nonvolatile flash memory chips. Specifically, major weakness of NAND flash memory mostly comes from frequent short and random writes spreading in the whole logical address space, causing writing performance decrease. This phenomenon occurs because NAND flash memory does not ...

متن کامل

Optimizing NAND flash-based SSDs via retention relaxation

As NAND Flash technology continues to scale down and more bits are stored in a cell, the raw reliability of NAND Flash memories degrades inevitably. To meet the retention capability required for a reliable storage system, we see a trend of longer write latency and more complex ECCs employed in an SSD storage system. These greatly impact the performance of future SSDs. In this paper, we present ...

متن کامل

State-based Die Binding for Enhancing SSD Internal Parallelism

Solid state drives (SSDs) implement large capacity, high performance storage devices by connecting multiple NAND flash memory chips in parallel using multiple channels. Channels can transfer data simultaneously, and each NAND package is composed of multiple dies, which can independently perform NAND operations such as read, write, and erase. Therefore, maximizing the parallel processing capabil...

متن کامل

NAND Flash Memory MT29F4G08AAAWP, MT29F8G08BAAWP, MT29F16G08FAAWP

Features • Single-level cell (SLC) technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2,048 blocks – Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks • READ performance – Random READ: 25μs (MAX) – Sequential READ: 25ns (MIN) • WRITE performance – PROGRAM PAGE: 220μs (TYP) – BLOCK ERASE: 1.5ms (TYP...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012